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| SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550 TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Complimentary to S8050 Collector current: IC=0.5A MARKING : 2TY MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Parameter Value -40 -25 -5 -0.5 0.3 150 -55-150 Units V V V A W ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) VCE= -1V, IC= -500mA IC=-500mA, IB= -50mA IC=-500mA, IB= -50mA VCE= -6V, IC= -20mA 150 50 -0.6 -1.2 V V MHz Test conditions IE=0 MIN -40 -25 -5 -0.1 -0.1 -0.1 120 400 MAX UNIT V V V IC = -100A, IC =-1mA, IB=0 IE= -100A, IC=0 VCB= -40V, IE=0 VCE= -20V, IB=0 VEB= -3V, IC=0 VCE= -1V, IC= -50mA A A A fT hFE(1) L 120-200 f=30MHz H CLASSIFICATION OF Rank Range 200-350 Typical Characteristics S8550 |
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